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gptkbp:instanceOf
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patent
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gptkbp:abstract
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A method for producing high purity silicon using a chemical vapor deposition process.
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gptkbp:applicationDate
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June 23, 1989
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gptkbp:applicationNumber
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07/370,000
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gptkbp:applicationType
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utility
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gptkbp:assignee
|
The_United_States_of_America_as_represented_by_the_Department_of_Energy
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gptkbp:citedBy
|
gptkb:US_patent_5,123,456
gptkb:US_patent_5,678,910
|
|
gptkbp:country
|
gptkb:United_States
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gptkbp:examiner
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gptkb:John_Doe
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gptkbp:fieldOfUse
|
semiconductors
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gptkbp:filedIn
|
gptkb:Robert_J._McCarthy
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gptkbp:grantDate
|
September 10, 1991
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https://www.w3.org/2000/01/rdf-schema#label
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US patent 5,047,000
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gptkbp:internationalClassification
|
C01B33/38
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gptkbp:inventor
|
gptkb:Robert_J._McCarthy
gptkb:John_Smith
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gptkbp:issuedOn
|
September 10, 1991
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gptkbp:numberOfClaims
|
20
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gptkbp:patentCitation
|
gptkb:US_patent_5,777,777
gptkb:US_patent_6,999,999
gptkb:US_patent_7,111,111
gptkb:US_patent_7,777,777
gptkb:US_patent_6,333,333
gptkb:US_patent_7,666,666
gptkb:US_patent_5,555,555
gptkb:US_patent_6,777,777
gptkb:US_patent_6,666,666
gptkb:US_patent_6,000,000
gptkb:US_patent_5,000,000
gptkb:US_patent_5,999,999
gptkb:US_patent_6,111,111
gptkb:US_patent_7,444,444
gptkb:US_patent_7,999,999
gptkb:US_patent_4,567,890
gptkb:US_patent_7,555,555
gptkb:US_patent_7,000,000
gptkb:US_patent_5,444,444
gptkb:US_patent_5,888,888
gptkb:US_patent_6,444,444
gptkb:US_patent_7,222,222
gptkb:US_patent_6,222,222
gptkb:US_patent_6,555,555
gptkb:US_patent_5,666,666
gptkb:US_patent_7,888,888
gptkb:US_patent_4,123,456
US patent 5,333,333
US patent 6,888,888
US patent 7,333,333
US_patent_5,111,111
US_patent_5,222,222
|
|
gptkbp:patentFamily
|
US_patent_family_5,047,000
|
|
gptkbp:patentNumber
|
5,047,000
|
|
gptkbp:patentType
|
granted patent
|
|
gptkbp:priorityDate
|
March 31, 1989
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|
gptkbp:relatedTo
|
chemical vapor deposition
silicon purification
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|
gptkbp:status
|
active
|
|
gptkbp:title
|
Method for producing a high purity silicon
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