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gptkbp:instanceOf
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patent
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gptkbp:abstract
|
A method for producing high purity silicon using a chemical vapor deposition process.
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gptkbp:applicationDate
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June 23, 1989
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gptkbp:applicationNumber
|
07/370,052
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gptkbp:applicationType
|
non-provisional
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|
gptkbp:assignee
|
The_United_States_of_America_as_represented_by_the_Department_of_Energy
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|
gptkbp:citedBy
|
gptkb:US_patent_5,123,456
|
|
gptkbp:currentStatus
|
expired
|
|
gptkbp:examiner
|
gptkb:John_Doe
|
|
gptkbp:fieldOfUse
|
semiconductors
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gptkbp:filedIn
|
gptkb:United_States
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
US patent 5,045,000
|
|
gptkbp:internationalClassification
|
C01B 33/00
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|
gptkbp:inventor
|
gptkb:Robert_J._McCarthy
|
|
gptkbp:inventorCountry
|
gptkb:United_States
|
|
gptkbp:issuedOn
|
September 3, 1991
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|
gptkbp:legalStatus
|
granted
|
|
gptkbp:numberOfClaims
|
20
|
|
gptkbp:patentCitation
|
gptkb:US_patent_4,999,999
|
|
gptkbp:patentClassification
|
C01B 33/00
|
|
gptkbp:patentExpiration
|
September 3, 2008
|
|
gptkbp:patentFamily
|
US_patent_family
|
|
gptkbp:patentFilingDate
|
September 3, 1991
|
|
gptkbp:patentLink
|
https://patents.google.com/patent/US5045000A/en
|
|
gptkbp:patentNumber
|
5,045,000
|
|
gptkbp:patentOwner
|
gptkb:Department_of_Energy
|
|
gptkbp:patentType
|
utility
|
|
gptkbp:priorityDate
|
March 31, 1989
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|
gptkbp:relatedTo
|
silicon production
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|
gptkbp:technologyArea
|
materials science
|
|
gptkbp:title
|
Method for producing a high purity silicon
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