US patent 5,039,000

GPTKB entity

Properties (54)
Predicate Object
gptkbp:instanceOf patent
gptkbp:abstract A method for producing high purity silicon.
gptkbp:applicationNumber 07/392,174
gptkbp:applicationType non-provisional
gptkbp:assignee The_United_States_of_America_as_represented_by_the_Department_of_Energy
gptkbp:citedBy gptkb:US_patent_5,123,456
gptkbp:examiner gptkb:John_Doe
gptkbp:expirationDate August 13, 2008
gptkbp:fieldOfUse semiconductors
gptkbp:filingDate July 3, 1989
https://www.w3.org/2000/01/rdf-schema#label US patent 5,039,000
gptkbp:internationalClassification C30B 29/00
gptkbp:inventor gptkb:Robert_J._McCarthy
Los Alamos
gptkbp:inventorCountry gptkb:USA
gptkbp:issuedOn August 13, 1991
gptkbp:legalStatus active
gptkbp:maintenanceFee paid
gptkbp:numberOfClaims 20
gptkbp:patentAbstract Describes a method for producing high purity silicon.
advancements in silicon purification.
gptkbp:patentAssignee gptkb:Department_of_Energy
gptkbp:patentCitation gptkb:US_patent_4,123,456
high purity silicon production.
high purity silicon.
semiconductor devices.
cited by 10 patents.
improved semiconductor performance.
high purity materials.
silicon purification methods.
silicon technology.
gptkbp:patentClassification chemical engineering
gptkbp:patentDescription A detailed description of the method for silicon production.
gptkbp:patentExpiration August 13, 2008
gptkbp:patentFamily US_patent_family
gptkbp:patentField materials science
electronics
semiconductor manufacturing
silicon technology
gptkbp:patentFilingDate July 3, 1989
August 13, 1991
gptkbp:patentInventor gptkb:Robert_J._McCarthy
gptkbp:patentNumber 5,039,000
US_patent
gptkbp:patentOwner gptkb:Department_of_Energy
gptkbp:patentStatus maintenance fee paid
gptkbp:patentType utility
07/392,174
gptkbp:priorityDate February 28, 1989
gptkbp:relatedPatent gptkb:US_patent_5,123,456
gptkbp:relatedTo silicon purification
gptkbp:status granted
gptkbp:title Method for producing a high purity silicon
gptkbp:USClassification 423/1.1