Properties (41)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
patent
|
| gptkbp:abstract |
A method for producing high purity silicon using a chemical vapor deposition process.
|
| gptkbp:applicationDate |
February 2, 1990
|
| gptkbp:applicationNumber |
07/392,198
|
| gptkbp:assignee |
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
| gptkbp:citedBy |
gptkb:US_patent_5,123,999
gptkb:US_patent_5,678,901 gptkb:US_patent_5,234,123 gptkb:US_patent_5,345,678 gptkb:US_patent_5,789,012 |
| gptkbp:examiner |
gptkb:John_Doe
|
| gptkbp:fieldOfUse |
semiconductors
|
| gptkbp:firstClaim |
A method for producing high purity silicon.
The method of claim 1, wherein the silicon source is silane. The method of claim 1, wherein the silicon is produced by chemical vapor deposition. The method of claim 1, wherein the process is conducted at low pressure. The method of claim 1, wherein the substrate is heated. The method of claim 1, wherein the purity of silicon is greater than 99.9999%. The method of claim 1, wherein the deposition rate is controlled. |
| gptkbp:grantDate |
July 30, 1991
|
| https://www.w3.org/2000/01/rdf-schema#label |
US patent 5,036,000
|
| gptkbp:internationalClassification |
H01L 21/00
C30B 29/00 C23C 14/00 |
| gptkbp:inventor |
gptkb:Robert_J._McCarthy
|
| gptkbp:issuedOn |
July 30, 1991
|
| gptkbp:legalStatus |
active
|
| gptkbp:maintenanceFee |
paid
|
| gptkbp:ninthClaim |
The method of claim 1, wherein the process is continuous.
The method of claim 1, wherein the reactor is a horizontal reactor. The method of claim 1, wherein the silicon is deposited on a substrate. |
| gptkbp:numberOfClaims |
20
|
| gptkbp:patentFamily |
gptkb:US_patent_family_5,036,000
|
| gptkbp:patentType |
utility patent
|
| gptkbp:priorityDate |
August 1, 1989
|
| gptkbp:relatedTo |
energy efficiency
semiconductor manufacturing chemical vapor deposition high purity materials silicon purification |
| gptkbp:title |
Method for producing a high purity silicon
|