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gptkbp:instanceOf
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patent
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gptkbp:abstract
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A method for producing high purity silicon using a chemical vapor deposition process.
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gptkbp:applicationNumber
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07/407,052
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gptkbp:applicationType
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utility
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gptkbp:assignee
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The_United_States_of_America_as_represented_by_the_Department_of_Energy
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gptkbp:citedBy
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gptkb:US_patent_5,456,789
gptkb:US_patent_5,123,999
gptkb:US_patent_5,567,890
gptkb:US_patent_5,234,567
gptkb:US_patent_5,345,678
|
|
gptkbp:classification
|
H01L 21/00
C01B 33/38
C23C 14/00
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gptkbp:country
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gptkb:United_States
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gptkbp:expirationDate
|
July 23, 2008
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gptkbp:fieldOfUse
|
semiconductors
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
US patent 5,034,000
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gptkbp:inventor
|
gptkb:Robert_J._McCarthy
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gptkbp:issuedOn
|
July 23, 1991
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gptkbp:legalStatus
|
active
|
|
gptkbp:patentFamily
|
gptkb:US_patent_family_5,234,567
gptkb:US_patent_family_5,034,000
gptkb:US_patent_family_5,123,999
gptkb:US_patent_family_5,456,789
gptkb:US_patent_family_5,567,890
gptkb:US_patent_family_5,345,678
|
|
gptkbp:priorityDate
|
March 30, 1989
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gptkbp:relatedTo
|
chemical vapor deposition
high purity materials
silicon purification
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gptkbp:title
|
Method for producing a high purity silicon
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