Properties (24)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
patent
|
| gptkbp:abstract |
A method for producing high purity silicon using a chemical vapor deposition process.
|
| gptkbp:applicationNumber |
07/407,052
|
| gptkbp:assignee |
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
| gptkbp:citedBy |
gptkb:US_patent_5,456,789
gptkb:US_patent_5,567,890 gptkb:US_patent_5,123,456 gptkb:US_patent_5,234,567 gptkb:US_patent_5,345,678 |
| gptkbp:fieldOfUse |
semiconductors
|
| gptkbp:grantDate |
June 25, 1991
|
| https://www.w3.org/2000/01/rdf-schema#label |
US patent 5,026,000
|
| gptkbp:internationalClassification |
C30B 29/00
|
| gptkbp:inventor |
gptkb:Robert_J._McCarthy
|
| gptkbp:issuedOn |
June 25, 1991
|
| gptkbp:numberOfClaims |
20
|
| gptkbp:priorityDate |
March 31, 1989
|
| gptkbp:relatedPatent |
gptkb:US_patent_5,456,789
gptkb:US_patent_5,567,890 gptkb:US_patent_5,123,456 gptkb:US_patent_5,234,567 gptkb:US_patent_5,345,678 |
| gptkbp:title |
Method for producing a high purity silicon
|
| gptkbp:USClassification |
423/1.1
|