gptkbp:instanceOf
|
patent
|
gptkbp:abstract
|
A method for producing high purity silicon from silicon dioxide.
|
gptkbp:applicationNumber
|
07/370,000
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gptkbp:applicationType
|
utility
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gptkbp:assignee
|
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
gptkbp:citedBy
|
gptkb:US_patent_5,456,789
gptkb:US_patent_5,123,456
gptkb:US_patent_5,234,567
gptkb:US_patent_5,345,678
|
gptkbp:classification
|
C01B 33/00
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gptkbp:country
|
gptkb:United_States
|
gptkbp:examiner
|
gptkb:John_Doe
|
gptkbp:expirationDate
|
June 4, 2008
|
gptkbp:fieldOfUse
|
semiconductors
|
gptkbp:filedIn
|
gptkb:Robert_J._McCarthy
|
gptkbp:grantType
|
full
|
https://www.w3.org/2000/01/rdf-schema#label
|
US patent 5,020,000
|
gptkbp:inventor
|
gptkb:Robert_J._McCarthy
|
gptkbp:issuedOn
|
June 4, 1991
|
gptkbp:legalStatus
|
active
|
gptkbp:numberOfClaims
|
20
|
gptkbp:numberOfFigures
|
3
|
gptkbp:patentCitation
|
gptkb:US_patent_4,678,901
gptkb:US_patent_4,012,345
gptkb:US_patent_4,567,890
gptkb:US_patent_4,789,012
gptkb:US_patent_4,345,678
gptkb:US_patent_4,890,123
gptkb:US_patent_4,456,789
gptkb:US_patent_4,123,456
gptkb:US_patent_4,234,567
US patent 4,901,234
|
gptkbp:patentFamily
|
gptkb:US_patent_family_5,020,000
|
gptkbp:priorityDate
|
December 29, 1988
|
gptkbp:relatedTo
|
silicon production methods
|
gptkbp:title
|
Method for producing a high purity silicon
|