Properties (47)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
patent
|
| gptkbp:abstract |
A method for producing high purity silicon using a chemical vapor deposition process.
|
| gptkbp:applicationDate |
January 2, 1990
|
| gptkbp:applicationNumber |
07/368,155
|
| gptkbp:applicationType |
non-provisional
|
| gptkbp:assignee |
The_United_States_of_America_as_represented_by_the_Department_of_Energy
|
| gptkbp:citedBy |
US patent 5,514,474
US_patent_5,300,470 US_patent_5,405,646 US_patent_5,474,771 US_patent_5,554,646 |
| gptkbp:country |
gptkb:United_States
|
| gptkbp:documentType |
patent document
|
| gptkbp:examiner |
gptkb:John_Doe
|
| gptkbp:fieldOfUse |
semiconductors
|
| gptkbp:filedIn |
gptkb:Robert_J._McCarthy
|
| gptkbp:grantType |
utility
|
| https://www.w3.org/2000/01/rdf-schema#label |
US patent 5,017,000
|
| gptkbp:internationalClassification |
H01L21/00
C01B33/38 |
| gptkbp:inventor |
gptkb:Robert_J._McCarthy
|
| gptkbp:issuedOn |
May 21, 1991
|
| gptkbp:language |
English
|
| gptkbp:legalStatus |
active
|
| gptkbp:numberOfClaims |
20
|
| gptkbp:patentCitation |
gptkb:US_patent_4,999,999
US_patent_4,877,883 US_patent_4,888,267 US_patent_4,911,934 US_patent_4,940,525 |
| gptkbp:patentExpiration |
May 21, 2008
|
| gptkbp:patentFamily |
gptkb:US_patent_family_5,017,000
|
| gptkbp:patentNumber |
5,017,000
|
| gptkbp:patentType |
granted
|
| gptkbp:priorityDate |
August 1, 1989
|
| gptkbp:relatedPatent |
gptkb:US_patent_5,017,004
US_patent_5,017,001 US_patent_5,017,002 US_patent_5,017,003 US_patent_5,017,005 |
| gptkbp:relatedTo |
energy efficiency
semiconductor manufacturing chemical vapor deposition high purity materials silicon production |
| gptkbp:status |
expired
|
| gptkbp:title |
Method for producing a high purity silicon
|