Statements (16)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:US_patent
|
| gptkbp:allows |
A method for producing a semiconductor device with improved characteristics by forming a silicon oxide film and a silicon nitride film on a silicon substrate, followed by selective etching.
|
| gptkbp:application |
US 05/747,370
|
| gptkbp:assignee |
gptkb:International_Business_Machines_Corporation
|
| gptkbp:class |
H01L21/02
|
| gptkbp:country |
gptkb:United_States
|
| gptkbp:filingDate |
1976-12-13
|
| https://www.w3.org/2000/01/rdf-schema#label |
US Patent 4101987A
|
| gptkbp:inventedBy |
gptkb:Kazuo_Sunami
|
| gptkbp:language |
English
|
| gptkbp:priorityDate |
1976-12-13
|
| gptkbp:publicationDate |
1978-07-18
|
| gptkbp:status |
expired
|
| gptkbp:title |
Method for producing a semiconductor device
|
| gptkbp:bfsParent |
gptkb:Don_Lancaster
|
| gptkbp:bfsLayer |
8
|