US Patent 4101983A

GPTKB entity

Statements (16)
Predicate Object
gptkbp:instanceOf gptkb:US_patent
gptkbp:allows A method for producing a semiconductor device with improved reliability by forming an insulating film on a semiconductor substrate and then forming a conductive film thereon.
gptkbp:application US 05/747,370
gptkbp:assignee gptkb:Sony_Corporation
gptkbp:class H01L21/3165
gptkbp:country gptkb:United_States
gptkbp:filingDate 1976-12-13
https://www.w3.org/2000/01/rdf-schema#label US Patent 4101983A
gptkbp:inventedBy gptkb:Masaru_Ibuka
gptkbp:language English
gptkbp:priorityDate 1975-12-15
gptkbp:publicationDate 1978-07-18
gptkbp:status Expired
gptkbp:title Method for producing a semiconductor device
gptkbp:bfsParent gptkb:Don_Lancaster
gptkbp:bfsLayer 8