Statements (18)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:US_patent
|
| gptkbp:allows |
A method for producing a semiconductor device having a buried layer by forming a groove in a semiconductor body, introducing an impurity into the groove, and then filling the groove with an insulating material.
|
| gptkbp:application |
US 74978976A
|
| gptkbp:assignee |
gptkb:Hughes_Aircraft_Company
|
| gptkbp:citation |
US Patent 4322261A
US Patent 4410802A |
| gptkbp:country |
gptkb:United_States
|
| gptkbp:fieldOfInvention |
Semiconductor device fabrication
|
| gptkbp:filingDate |
1976-12-13
|
| https://www.w3.org/2000/01/rdf-schema#label |
US Patent 4101981A
|
| gptkbp:inventedBy |
Robert W. Bower
|
| gptkbp:language |
English
|
| gptkbp:priorityDate |
1976-12-13
|
| gptkbp:publicationDate |
1978-07-18
|
| gptkbp:status |
Granted
|
| gptkbp:title |
Method for producing a semiconductor device having a buried layer
|
| gptkbp:bfsParent |
gptkb:Don_Lancaster
|
| gptkbp:bfsLayer |
8
|