US 63,789,016 H1

GPTKB entity

Properties (95)
Predicate Object
gptkbp:instanceOf patent
gptkbp:analyzes Statistical.
gptkbp:associatedWith Yes.
gptkbp:brand High.
gptkbp:communityFeedback Positive.
gptkbp:environmentalImpact Neutral.
gptkbp:firstClaim Assigned_to_Tech_Innovations_LLC.
gptkbp:hasAbstract This patent describes a method for improving the efficiency of semiconductor devices.
gptkbp:hasApplicationNumber 63/789,016
gptkbp:hasAssignee gptkb:Tech_Innovations_LLC
gptkbp:hasCitedPatent gptkb:US_63,789,019_H1
gptkbp:hasClaim 20
Yes.
gptkbp:hasCollaborationsWith With industry partners.
University_of_Technology.
gptkbp:hasCompetitors Yes.
gptkbp:hasContent Higher efficiency.
Complex manufacturing process.
gptkbp:hasContribution High.
Multiple.
gptkbp:hasCountry gptkb:USA
gptkbp:hasCustomerBase Expanding.
gptkbp:hasDescription A detailed description of the method and its applications.
gptkbp:hasDeveloped Yes.
Ongoing.
gptkbp:hasExaminer Jane_Smith
gptkbp:hasFacility Yes.
A new method of doping.
gptkbp:hasFeature Positive.
Required.
In place.
gptkbp:hasFieldOfUse Consumer electronics
Yes
Semiconductor technology
gptkbp:hasFilingDate 2021-05-15
gptkbp:hasFilm gptkb:US_63,789,021_H1
gptkbp:hasFunding Strong.
Private sector.
Government grant.
gptkbp:hasGoals 5
Electronics industry.
gptkbp:hasImpactOn Positive.
gptkbp:hasInternationalClassification H01L
gptkbp:hasInventor gptkb:Alice_Johnson
gptkb:John_Doe
gptkbp:hasLanguage New_York.
gptkbp:hasLegalEvent Patent granted.
gptkbp:hasLegalStatus Active
gptkbp:hasMember Available.
gptkbp:hasOccupation Yes.
Active.
gptkbp:hasParticipatedIn Yes.
gptkbp:hasPartnershipsWith Smartphones.
Available.
In progress.
gptkbp:hasPriorityDate 2020-05-15
2041-05-15
gptkbp:hasPrograms gptkb:US_63,789,020_H1
gptkbp:hasPublications gptkb:US_63,789,016_H1
2021-11-15
Granted patent.
Journal_of_Semiconductor_Research.
gptkbp:hasPublicTransport Robust.
gptkbp:hasRelatedPatent gptkb:US_63,789,018_H1
Utility patent
Non-provisional.
Wearable technology.
Incremental.
gptkbp:hasResearchInterest Experimental.
Material science.
Further optimization.
Improved semiconductor devices.
gptkbp:hasResidence California.
gptkbp:hasService Established.
gptkbp:hasSpecialty Active.
Protected.
gptkbp:hasSustainabilityInitiatives Yes.
gptkbp:hasTechnicalField Electronics
gptkbp:hasTechnology Yes.
Improving semiconductor performance.
gptkbp:hasTitle Method for enhancing the performance of a semiconductor device
gptkbp:hasVariants No.
https://www.w3.org/2000/01/rdf-schema#label US 63,789,016 H1
gptkbp:inventiveStep Yes
gptkbp:isCitedBy gptkb:US_63,789,017_H1
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gptkbp:isFiledUnder USPTO.
gptkbp:isGranted true
gptkbp:isPartOf Semiconductor patent family.
gptkbp:isPublishedIn US_2021/0367890_A1
gptkbp:isRelatedTo gptkb:US_63,789,015_H1
gptkbp:market High.
Aggressive.
Scheduled.
Ready.