gptkbp:instanceOf
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patent
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gptkbp:hasAbstract
|
A method for enhancing the performance of a semiconductor device by modifying the structure.
|
gptkbp:hasApplicationNumber
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10/123,456
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gptkbp:hasAssignee
|
gptkb:Intel_Corporation
|
gptkbp:hasCitedPatent
|
gptkb:US_6,789,123_B2
gptkb:US_6,789,543_B2
gptkb:US_5,432,109_A
gptkb:US_5,678,901_A
gptkb:US_6,123,456_B1
gptkb:US_7,654,321_B2
gptkb:US_7,890,123_B1
gptkb:US_6,789,210_A1
gptkb:US_6,789,321_A1
gptkb:US_6,789,654_B2
gptkb:US_6,789,876_A1
gptkb:US_6,789,987_B1
gptkb:US_6,789,654_A1
gptkb:US_6,543,210_A1
gptkb:US_6,789,876_B1
gptkb:US_6,789,321_B2
gptkb:US_6,789,543_A1
gptkb:US_6,789,876_B2
gptkb:US_6,789,210_B2
gptkb:US_6,789,210_B1
|
gptkbp:hasClaim
|
20
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gptkbp:hasDescription
|
The invention relates to semiconductor devices and methods for their fabrication.
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gptkbp:hasExaminer
|
gptkb:Michael_Johnson
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gptkbp:hasFieldOfUse
|
Electrical engineering
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gptkbp:hasFigures
|
Figure 2 illustrates the method steps.
Figure 3 depicts the performance enhancement.
Figure 4 shows comparative results.
Figure 5 presents alternative embodiments.
Figure 1 shows the structure of the semiconductor device.
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gptkbp:hasFilingDate
|
2004-02-06
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gptkbp:hasInternationalClassification
|
H01L 21/00
257/1.1
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gptkbp:hasInventor
|
gptkb:John_Doe
Jane_Smith
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gptkbp:hasLegalStatus
|
Active
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gptkbp:hasPatentNumber
|
6789582
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gptkbp:hasPriorityDate
|
2024-02-06
2003-02-06
|
gptkbp:hasPublications
|
2004-09-14
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gptkbp:hasTechnicalField
|
Semiconductor devices
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gptkbp:hasTitle
|
Method for enhancing the performance of a semiconductor device
|
https://www.w3.org/2000/01/rdf-schema#label
|
US 6,789,582 C17
|
gptkbp:isCitedBy
|
gptkb:US_7,123,456_B2
gptkb:US_7,654,321_B1
|
gptkbp:isFiledIn
|
gptkb:United_States
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gptkbp:isFiledUnder
|
Class 438
Subclass 100
|
gptkbp:isPartOf
|
US_patent_family
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gptkbp:isRelatedTo
|
semiconductor technology
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gptkbp:numberOfFigures
|
5
|