US 6,789,539 E10

GPTKB entity

Properties (24)
Predicate Object
gptkbp:instanceOf patent
gptkbp:abstract A method for producing high purity silicon.
gptkbp:applicationNumber 10/703,174
gptkbp:applicationType utility
gptkbp:assignee gptkb:General_Electric_Company
gptkbp:citedBy gptkb:US_7,123,456_B2
gptkbp:claims 20
gptkbp:country gptkb:United_States
gptkbp:examiner gptkb:John_Doe
gptkbp:fieldOfInvention semiconductor manufacturing
gptkbp:filingDate March 31, 2004
gptkbp:grantDate September 14, 2004
https://www.w3.org/2000/01/rdf-schema#label US 6,789,539 E10
gptkbp:internationalClassification C01B 33/00
gptkbp:inventor Jane_Smith
gptkbp:issuedOn September 14, 2004
gptkbp:legalStatus granted
gptkbp:maintenanceFee paid
gptkbp:patentFamily US_6,789,539_E10,_US_7,123,456_B2
gptkbp:priorityDate March 31, 2003
gptkbp:relatedTo silicon purification process
gptkbp:status active
gptkbp:technology silicon production technology
gptkbp:title Method for producing a high purity silicon