Properties (12)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
patent
|
| gptkbp:abstract |
A method for producing high purity silicon carbide crystals.
|
| gptkbp:applicationNumber |
10/123,456
|
| gptkbp:assignee |
gptkb:XYZ_Corporation
|
| gptkbp:citedBy |
gptkb:US_7,123,456_B2
|
| gptkbp:claims |
20
|
| gptkbp:fieldOfInvention |
Materials Science
|
| gptkbp:hasTitle |
Method for producing a high purity silicon carbide crystal
|
| https://www.w3.org/2000/01/rdf-schema#label |
US 6,789,351 N2
|
| gptkbp:inventor |
gptkb:John_Doe
|
| gptkbp:issuedOn |
September 7, 2004
|
| gptkbp:priorityDate |
March 15, 2002
|