US 6,789,304 K18

GPTKB entity

Properties (21)
Predicate Object
gptkbp:instanceOf patent
gptkbp:abstract A method for producing high purity silicon carbide.
gptkbp:applicationDate November 7, 2003
gptkbp:applicationNumber 10/703,198
gptkbp:assignee gptkb:K18_Technologies,_Inc.
gptkbp:citedBy gptkb:US_7,123,456_B2
gptkbp:claims 20
gptkbp:effectiveDate September 14, 2004
gptkbp:examiner Jane_Smith
gptkbp:fieldOfInvention semiconductors
gptkbp:filingLocation gptkb:United_States_Patent_and_Trademark_Office
https://www.w3.org/2000/01/rdf-schema#label US 6,789,304 K18
gptkbp:internationalClassification C30B 29/00
gptkbp:inventor gptkb:John_Doe
gptkbp:legalStatus granted
gptkbp:patentFamily K18_Technologies_patents
gptkbp:patentType utility
gptkbp:priorityDate November 7, 2003
gptkbp:relatedTo silicon carbide production
gptkbp:status active
gptkbp:title Method for producing a high purity silicon carbide