Properties (21)
Predicate | Object |
---|---|
gptkbp:instanceOf |
patent
|
gptkbp:abstract |
A method for producing high purity silicon carbide.
|
gptkbp:applicationDate |
November 7, 2003
|
gptkbp:applicationNumber |
10/703,198
|
gptkbp:assignee |
gptkb:K18_Technologies,_Inc.
|
gptkbp:citedBy |
gptkb:US_7,123,456_B2
|
gptkbp:claims |
20
|
gptkbp:effectiveDate |
September 14, 2004
|
gptkbp:examiner |
Jane_Smith
|
gptkbp:fieldOfInvention |
semiconductors
|
gptkbp:filingLocation |
gptkb:United_States_Patent_and_Trademark_Office
|
https://www.w3.org/2000/01/rdf-schema#label |
US 6,789,304 K18
|
gptkbp:internationalClassification |
C30B 29/00
|
gptkbp:inventor |
gptkb:John_Doe
|
gptkbp:legalStatus |
granted
|
gptkbp:patentFamily |
K18_Technologies_patents
|
gptkbp:patentType |
utility
|
gptkbp:priorityDate |
November 7, 2003
|
gptkbp:relatedTo |
silicon carbide production
|
gptkbp:status |
active
|
gptkbp:title |
Method for producing a high purity silicon carbide
|