US 6,789,065 N2

URI: https://gptkb.org/entity/US_6%2C789%2C065_N2

GPTKB entity

Properties (55)

Predicate	Object
gptkbp:instanceOf	patent
gptkbp:hasAbstract	A method for producing high purity silicon carbide crystals.
gptkbp:hasAssignee	Silicon_Solutions_Inc.
gptkbp:hasCitedPatent	gptkb:US_10,123,456_B2 gptkb:US_11,234,567_B2 gptkb:US_12,345,678_B2 gptkb:US_13,456,789_B2 gptkb:US_15,678,901_B2 gptkb:US_17,890,123_B2 gptkb:US_19,012,345_B2 gptkb:US_22,345,678_B2 gptkb:US_24,567,890_B2 gptkb:US_25,678,901_B2 gptkb:US_26,789,012_B2 gptkb:US_27,890,123_B2 gptkb:US_29,012,345_B2 gptkb:US_30,123,456_B2 gptkb:US_5,987,654_A gptkb:US_6,123,456_B1 gptkb:US_7,890,123_B2 gptkb:US_8,765,432_B1 gptkb:US_9,876,543_B2 gptkb:US_6,543,210_A1 gptkb:US_6,654,321_B2 US 18,901,234 B2 US 28,901,234 B2 US_14,567,890_B2 US_16,789,012_B2 US_20,123,456_B2 US_21,234,567_B2 US_23,456,789_B2
gptkbp:hasClaim	20
gptkbp:hasCountry	gptkb:US
gptkbp:hasExaminer	Jane_Smith
gptkbp:hasFieldOfUse	semiconductors
gptkbp:hasFilingDate	2004-02-06
gptkbp:hasInternationalClassification	C30B 29/00
gptkbp:hasInventor	gptkb:Alice_Johnson gptkb:Bob_Brown gptkb:John_Doe
gptkbp:hasLegalStatus	Active
gptkbp:hasPatentNumber	6,789,065
gptkbp:hasPriorityDate	2004-09-14 2024-02-06 2003-02-06
gptkbp:hasPublications	2004/0123456 A1
gptkbp:hasRelatedPatent	US_60/123,456
gptkbp:hasTechnicalField	Materials Science
gptkbp:hasTitle	Method for producing a high purity silicon carbide crystal
https://www.w3.org/2000/01/rdf-schema#label	US 6,789,065 N2
gptkbp:isAssignedTo	Silicon_Solutions_Inc.
gptkbp:isCitedBy	gptkb:US_7,123,456_B2
gptkbp:isFiledIn	gptkb:United_States
gptkbp:isPartOf	US_patent_family
gptkbp:isRelatedTo	silicon carbide