Properties (28)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
patent
|
| gptkbp:hasAssignee |
gptkb:Cree,_Inc.
|
| gptkbp:hasCitations |
US_4873020
US_4935350 US_4963440 US_5000830 US_5013440 |
| gptkbp:hasFieldOfUse |
optical devices
high-power applications LED technology electronic components semiconductors high-frequency applications power devices high-efficiency devices high-temperature electronics high-voltage applications |
| gptkbp:hasFilingDate |
1989-06-30
|
| gptkbp:hasInventor |
gptkb:John_A._McCarty
|
| gptkbp:hasLegalStatus |
active
|
| gptkbp:hasPatentNumber |
5051525334
|
| gptkbp:hasPublications |
1991-09-24
|
| gptkbp:hasTitle |
Method for producing a high purity silicon carbide crystal
|
| https://www.w3.org/2000/01/rdf-schema#label |
US 5051525334 B2
|
| gptkbp:isFiledIn |
gptkb:United_States
|
| gptkbp:isGranted |
true
|
| gptkbp:isPartOf |
US_patent_family
|
| gptkbp:usesTechnology |
silicon carbide production
|