|
gptkbp:instanceOf
|
patent
|
|
gptkbp:abstract
|
A method for producing high purity silicon.
|
|
gptkbp:applicationDate
|
1989-06-05
|
|
gptkbp:applicationNumber
|
07/364,080
|
|
gptkbp:applicationPublication
|
US_07/364,080_A1
|
|
gptkbp:applicationStatus
|
published
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|
gptkbp:applicationType
|
utility
|
|
gptkbp:assignee
|
gptkb:The_United_States_of_America
|
|
gptkbp:citedBy
|
US_5,123,456
|
|
gptkbp:country
|
gptkb:United_States
|
|
gptkbp:evaluates
|
chemical vapor deposition
|
|
gptkbp:examiner
|
gptkb:John_Doe
|
|
gptkbp:fieldOfInvention
|
semiconductor manufacturing
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|
gptkbp:filingDate
|
June 5, 1989
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
US 5,000,388 B2
|
|
gptkbp:internationalClassification
|
C01B 33/00
|
|
gptkbp:inventor
|
gptkb:Alice_Johnson
Jane_Smith
Robert_J._H._Hwang
|
|
gptkbp:issuedOn
|
March 19, 1991
|
|
gptkbp:legalStatus
|
granted
|
|
gptkbp:maintenanceFee
|
paid
|
|
gptkbp:material
|
silicon
|
|
gptkbp:numberOfClaims
|
20
|
|
gptkbp:patentAbstract
|
non-provisional
|
|
gptkbp:patentAssignee
|
gptkb:Department_of_Energy
|
|
gptkbp:patentCitation
|
yes
US_4,500,000
|
|
gptkbp:patentClassification
|
A01N 1/00
|
|
gptkbp:patentExpiration
|
2011-03-19
|
|
gptkbp:patentFamily
|
US 5,000,388 B2, EP 0456789, JP 1234567
|
|
gptkbp:patentFamilyMembers
|
3
|
|
gptkbp:patentField
|
materials science
|
|
gptkbp:patentInventor
|
20 years
|
|
gptkbp:patentNumber
|
5,000,388
|
|
gptkbp:patentOffice
|
gptkb:USPTO
|
|
gptkbp:patentStatus
|
active
in force
|
|
gptkbp:patentType
|
yes
utility patent
granted patent
|
|
gptkbp:priorityDate
|
March 19, 1990
|
|
gptkbp:relatedTo
|
silicon purification
|
|
gptkbp:result
|
high purity silicon
|
|
gptkbp:status
|
active
|
|
gptkbp:title
|
Method for producing a high purity silicon
|