|
gptkbp:instanceOf
|
patent
|
|
gptkbp:covers
|
semiconductor technology
|
|
gptkbp:hasAbstract
|
A method for enhancing the performance of a semiconductor device by modifying the doping profile.
|
|
gptkbp:hasApplicationNumber
|
10/123456
|
|
gptkbp:hasAssignee
|
gptkb:Tech_Innovations_Inc.
|
|
gptkbp:hasClaim
|
20
Independent
|
|
gptkbp:hasCountry
|
gptkb:USA
|
|
gptkbp:hasDescription
|
The invention relates to a method for improving the efficiency of semiconductor devices.
|
|
gptkbp:hasExaminer
|
Jane_Smith
|
|
gptkbp:hasFacility
|
Patent Family A
|
|
gptkbp:hasFeature
|
Paid
|
|
gptkbp:hasFieldOfUse
|
electronics
|
|
gptkbp:hasFilingDate
|
June 15, 2001
|
|
gptkbp:hasGoals
|
Yes
|
|
gptkbp:hasInternationalClassification
|
257/1
H01L
|
|
gptkbp:hasInventor
|
gptkb:John_Doe
|
|
gptkbp:hasLanguage
|
English
|
|
gptkbp:hasLegalEvent
|
Patent Granted
|
|
gptkbp:hasLegalStatus
|
Active
|
|
gptkbp:hasPatentNumber
|
4455667791
|
|
gptkbp:hasPersonnel
|
Exclusive License
|
|
gptkbp:hasPriorityDate
|
June 15, 2021
June 10, 2004
June 15, 2000
|
|
gptkbp:hasPublications
|
B2
June 10, 2004
|
|
gptkbp:hasRelatedPatent
|
gptkb:US_4455667788_C2
Utility Patent
Non-Provisional
|
|
gptkbp:hasResearchInterest
|
Electrical Engineering
|
|
gptkbp:hasTechnicalField
|
material science
|
|
gptkbp:hasTechnology
|
Improved performance
Specification Document 12345
|
|
gptkbp:hasTitle
|
Method for enhancing the performance of a semiconductor device
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
US 4455667791 C2
|
|
gptkbp:isAssignedTo
|
gptkb:Tech_Innovations_Inc.
|
|
gptkbp:isCitedBy
|
US_1234567890_A1
|
|
gptkbp:isCitedIn
|
US 9876543210 B2
|
|
gptkbp:isFiledIn
|
gptkb:United_States
|
|
gptkbp:isFiledUnder
|
gptkb:USPTO
|
|
gptkbp:isGranted
|
true
|
|
gptkbp:isPartOf
|
semiconductor patents
|
|
gptkbp:isRelatedTo
|
gptkb:US_4455667789_C2
|
|
gptkbp:usesTechnology
|
Nanotechnology
|