US 4321098 B3

GPTKB entity

Properties (22)
Predicate Object
gptkbp:instanceOf patent
gptkbp:abstract A method for manufacturing a semiconductor device that improves yield.
gptkbp:applicationNumber US_06/188,123
gptkbp:assignee gptkb:XYZ_Corporation
gptkbp:citedBy gptkb:US_4567890_B2
gptkbp:class H01L 21/00
gptkbp:examiner Jane_Smith
gptkbp:fieldOfInvention semiconductor technology
gptkbp:filingDate August 12, 1980
https://www.w3.org/2000/01/rdf-schema#label US 4321098 B3
gptkbp:inventor gptkb:John_Doe
gptkbp:issuedBy March 30, 1982
gptkbp:language English
gptkbp:location gptkb:United_States
gptkbp:numberOfClaims 10
gptkbp:patentFamily US_4321098_B3,_US_4567890_B2,_US_1234567_A1
gptkbp:priorityDate August 12, 1980
gptkbp:publications B3
gptkbp:relatedTo gptkb:US_1234567_A1
gptkbp:status expired
gptkbp:subclass H01L 21/02
gptkbp:title Method for manufacturing a semiconductor device