Properties (29)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
patent
|
| gptkbp:hasAbstract |
A method for producing high purity silicon from silicon dioxide.
|
| gptkbp:hasAssignee |
gptkb:Silicon_Innovations_Inc.
|
| gptkbp:hasCitations |
US_3991234
US_4012345 US_4023456 |
| gptkbp:hasClaim |
10. The method of claim 1, wherein the process is environmentally friendly.
1. A method for producing silicon. 4. The method of claim 1, wherein the silicon dioxide is sourced from quartz. 8. The method of claim 1, wherein the yield is greater than 90%. 5. The method of claim 1, wherein the process is conducted in a vacuum. 9. The method of claim 1, wherein impurities are reduced to less than 1 ppm. 2. The method of claim 1, wherein the silicon is of high purity. 3. The method of claim 1, further comprising a purification step. 7. The method of claim 1, wherein the silicon is used in electronic devices. 6. The method of claim 1, wherein the temperature exceeds 1500 degrees Celsius. |
| gptkbp:hasCountry |
gptkb:United_States
|
| gptkbp:hasDescription |
This patent describes a process for refining silicon.
|
| gptkbp:hasFieldOfUse |
semiconductors
|
| gptkbp:hasFilingDate |
1978-12-29
|
| gptkbp:hasInternationalClassification |
C30B 29/00
|
| gptkbp:hasInventor |
gptkb:John_Doe
|
| gptkbp:hasLegalStatus |
active
|
| gptkbp:hasPriorityDate |
1980-04-29
1977-12-29 |
| gptkbp:hasRelatedPatent |
US_41000000
|
| gptkbp:hasTitle |
Method for producing a high purity silicon
|
| https://www.w3.org/2000/01/rdf-schema#label |
US 42000084
|
| gptkbp:numberOfFigures |
42000084
|