Properties (47)
Predicate | Object |
---|---|
gptkbp:instanceOf |
patent
|
gptkbp:hasAbstract |
This patent describes a method for enhancing the performance of semiconductor devices.
|
gptkbp:hasApplicationNumber |
16/123,456
|
gptkbp:hasAssignee |
gptkb:Tech_Innovations_LLC
|
gptkbp:hasCitedPatent |
US_20,000,000_A1
|
gptkbp:hasClaim |
20
dependent claim independent claim |
gptkbp:hasCountry |
gptkb:USA
|
gptkbp:hasCPCClassification |
H01L29/00
|
gptkbp:hasDescription |
The invention relates to semiconductor devices and methods for their fabrication.
|
gptkbp:hasExaminer |
Jane_Smith
|
gptkbp:hasFacility |
US_21,555,579_C1_family
|
gptkbp:hasFieldOfUse |
electrical engineering
electronics microelectronics |
gptkbp:hasFigures |
5
|
gptkbp:hasFilingDate |
2020-06-15
2021-10-12 |
gptkbp:hasGoals |
chemical vapor deposition
|
gptkbp:hasImpactOn |
high-performance devices
|
gptkbp:hasInternationalClassification |
H01L
|
gptkbp:hasInventor |
gptkb:John_Doe
|
gptkbp:hasKeywords |
semiconductor, performance, enhancement
|
gptkbp:hasLegalEvent |
patent granted
|
gptkbp:hasLegalStatus |
active
granted |
gptkbp:hasPriorityDate |
2019-06-15
|
gptkbp:hasPublications |
B1
2021-11-02 21,555,579 C1 |
gptkbp:hasRelatedPatent |
gptkb:US_21,555,578_B1
process innovation utility patent non-provisional |
gptkbp:hasResearchInterest |
material science
|
gptkbp:hasTechnicalField |
semiconductor devices
|
gptkbp:hasTechnology |
improved efficiency
enhanced semiconductor performance. |
gptkbp:hasTitle |
Method for enhancing the performance of a semiconductor device
|
gptkbp:hasTouristAttraction |
silicon
|
https://www.w3.org/2000/01/rdf-schema#label |
US 21,555,579 C1
|
gptkbp:isCitedBy |
US_21,000,000_B2
|
gptkbp:isFiledIn |
gptkb:United_States
|
gptkbp:isGranted |
true
|
gptkbp:isPartOf |
US_patent_system
|
gptkbp:isRelatedTo |
semiconductor technology
|