Statements (14)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:US_patent
|
| gptkbp:allows |
A method for producing a semiconductor device having a multilayer interconnection structure with improved reliability.
|
| gptkbp:application |
07/553,073
|
| gptkbp:assignee |
gptkb:Hitachi_Ltd
|
| gptkbp:country |
gptkb:United_States
|
| gptkbp:filingDate |
1990-07-13
|
| https://www.w3.org/2000/01/rdf-schema#label |
US51501374A
|
| gptkbp:inventedBy |
gptkb:Kazuo_Sato
|
| gptkbp:priorityDate |
1990-07-13
|
| gptkbp:publicationDate |
1992-09-22
|
| gptkbp:status |
Expired - Lifetime
|
| gptkbp:title |
Method for producing a semiconductor device
|
| gptkbp:bfsParent |
gptkb:Transversely_Excited_Atmospheric_Pressure_Gas_Laser_and_Method
|
| gptkbp:bfsLayer |
7
|