Statements (16)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:US_patent
|
| gptkbp:allows |
A method of producing a semiconductor device with improved reliability by forming an insulating film and a conductive film in a specific sequence.
|
| gptkbp:application |
gptkb:US06/724,370
|
| gptkbp:assignee |
gptkb:Hitachi,_Ltd.
|
| gptkbp:class |
H01L21/3165
|
| gptkbp:country |
gptkb:United_States
|
| gptkbp:filingDate |
1985-04-19
|
| https://www.w3.org/2000/01/rdf-schema#label |
US4656592A
|
| gptkbp:inventedBy |
gptkb:Kazuo_Iizuka
|
| gptkbp:language |
English
|
| gptkbp:priorityDate |
1984-04-20
|
| gptkbp:publicationDate |
1987-04-07
|
| gptkbp:status |
Expired
|
| gptkbp:title |
Method of producing a semiconductor device
|
| gptkbp:bfsParent |
gptkb:Method_and_apparatus_for_controlling_communications_between_a_host_computer_and_a_network
|
| gptkbp:bfsLayer |
6
|