Tunnel magnetoresistance sensor
GPTKB entity
Statements (32)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
magnetic sensor
|
| gptkbp:advantage |
higher output than AMR and GMR sensors
|
| gptkbp:application |
gptkb:consumer_electronics
automotive industry industrial automation current sensing position sensing angle detection magnetic field sensing |
| gptkbp:barrierMaterial |
gptkb:magnesium_oxide
aluminum oxide |
| gptkbp:component |
magnetic tunnel junction
|
| gptkbp:discoveredBy |
1990s
|
| gptkbp:feature |
high sensitivity
low power consumption compact size wide dynamic range high signal-to-noise ratio |
| https://www.w3.org/2000/01/rdf-schema#label |
Tunnel magnetoresistance sensor
|
| gptkbp:material |
ferromagnetic layers
insulating barrier |
| gptkbp:output |
resistance change
|
| gptkbp:principle |
spin-dependent tunneling
|
| gptkbp:relatedTo |
anisotropic magnetoresistance sensor
giant magnetoresistance sensor |
| gptkbp:usedIn |
current sensors
magnetic encoders angle sensors hard disk drive read heads |
| gptkbp:uses |
tunnel magnetoresistance effect
|
| gptkbp:bfsParent |
gptkb:Magnetic_Sensors
|
| gptkbp:bfsLayer |
6
|