Transition Metal Dichalcogenides
GPTKB entity
Statements (50)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
class of compounds
|
| gptkbp:abbreviation |
gptkb:TMDs
|
| gptkbp:application |
catalysis
electronics energy storage lubricants |
| gptkbp:bandgap_type |
direct (monolayer)
indirect (bulk) |
| gptkbp:canBe |
single
bulk few-layer |
| gptkbp:chemicalFormula |
gptkb:MX2
|
| gptkbp:common_chalcogens |
gptkb:sulfur
selenium tellurium |
| gptkbp:common_transition_metals |
titanium
molybdenum tungsten |
| gptkbp:consistsOf |
chalcogen atom
transition metal atom |
| gptkbp:crystalSystem |
hexagonal
octahedral trigonal prismatic |
| gptkbp:discoveredBy |
early 20th century
|
| gptkbp:exhibits |
charge density waves
strong spin-orbit coupling valley polarization layer-dependent properties |
| https://www.w3.org/2000/01/rdf-schema#label |
Transition Metal Dichalcogenides
|
| gptkbp:notable_member |
gptkb:molybdenum_disulfide
gptkb:titanium_disulfide gptkb:tungsten_disulfide |
| gptkbp:property |
metallic
semiconducting superconducting layer-dependent bandgap |
| gptkbp:relatedTo |
graphene
|
| gptkbp:researchInterest |
2D materials
|
| gptkbp:structureType |
layered
|
| gptkbp:studiedBy |
optoelectronics
nanoelectronics spintronics |
| gptkbp:synthesisType |
chemical vapor deposition
mechanical exfoliation |
| gptkbp:used_in |
photodetectors
solar cells hydrogen evolution reaction field-effect transistors |
| gptkbp:bfsParent |
gptkb:2D_Materials
|
| gptkbp:bfsLayer |
8
|