|
gptkbp:instanceOf
|
gptkb:semiconductor_manufacturing_process
|
|
gptkbp:competitor
|
Intel 10-nanometer process
Samsung 7-nanometer process
|
|
gptkbp:developedBy
|
gptkb:TSMC
|
|
gptkbp:EUVLayerCount
|
up to 4 (N7+)
|
|
gptkbp:EUVUsed
|
partially
N7+ variant
|
|
gptkbp:finFETUsed
|
yes
|
|
gptkbp:introducedIn
|
2018
|
|
gptkbp:locationOfFabs
|
gptkb:Taiwan
|
|
gptkbp:massProductionStart
|
April 2018
|
|
gptkbp:notableClient
|
gptkb:Apple
gptkb:AMD
gptkb:Qualcomm
gptkb:MediaTek
gptkb:HiSilicon
|
|
gptkbp:notableProduct
|
gptkb:AMD_Radeon_RX_5000_series
gptkb:AMD_Ryzen_3000_series
gptkb:Qualcomm_Snapdragon_855
gptkb:Apple_A12_Bionic
gptkb:HiSilicon_Kirin_980
|
|
gptkbp:performanceImprovementOver10nm
|
up to 20%
|
|
gptkbp:powerEfficiencyImprovementOver10nm
|
up to 40%
|
|
gptkbp:predecessor
|
TSMC 10-nanometer process
|
|
gptkbp:successor
|
TSMC 5-nanometer process
|
|
gptkbp:technology
|
7 nm
|
|
gptkbp:transistorDensity
|
~100 million/mm²
|
|
gptkbp:usedFor
|
integrated circuits
CPUs
GPUs
mobile processors
|
|
gptkbp:variant
|
N7
N7+
N7P
|
|
gptkbp:bfsParent
|
gptkb:TSMC_7nm
|
|
gptkbp:bfsLayer
|
7
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
TSMC 7-nanometer process
|