Statements (17)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:mathematical_concept
|
| gptkbp:appliesTo |
p-n junction diode
|
| gptkbp:category |
electronics equations
semiconductor device equations |
| gptkbp:describes |
current-voltage characteristic of a diode
|
| gptkbp:expressedIn |
I = I_S (exp(V/(nV_T)) - 1)
|
| gptkbp:formedBy |
1949
|
| https://www.w3.org/2000/01/rdf-schema#label |
Shockley diode equation
|
| gptkbp:namedAfter |
gptkb:William_Shockley
|
| gptkbp:parameter |
applied voltage (V)
ideality factor (n) saturation current (I_S) thermal voltage (V_T) |
| gptkbp:usedIn |
electronics
semiconductor physics |
| gptkbp:bfsParent |
gptkb:William_B._Shockley
|
| gptkbp:bfsLayer |
8
|