Statements (32)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
|
| gptkbp:dataRetention |
10 years or more
|
| gptkbp:differenceFromFlashMemory |
higher endurance
byte-level erase/write lower density |
| gptkbp:differenceFromParallelEEPROM |
uses fewer pins
|
| gptkbp:endurance |
1 million cycles or more
|
| gptkbp:feature |
low power consumption
reprogrammable electrically erasable byte-level write small package size |
| https://www.w3.org/2000/01/rdf-schema#label |
Serial EEPROM
|
| gptkbp:interface |
gptkb:UART
|
| gptkbp:manufacturer |
gptkb:Atmel
gptkb:STMicroelectronics gptkb:Microchip_Technology gptkb:ON_Semiconductor gptkb:Rohm_Semiconductor |
| gptkbp:memoryCapacityRange |
bits to megabits
|
| gptkbp:period |
slow compared to RAM
|
| gptkbp:supportsProtocol |
gptkb:I2C
gptkb:SPI gptkb:Microwire |
| gptkbp:usedFor |
data storage
|
| gptkbp:usedIn |
gptkb:consumer_electronics
embedded systems computers automotive electronics industrial control |
| gptkbp:bfsParent |
gptkb:Atmel_Corporation
|
| gptkbp:bfsLayer |
6
|