Statements (55)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
Electrode
Semiconductor device |
| gptkbp:advantage |
high efficiency
sensitive to temperature high frequency operation low power loss higher cost than standard diodes limited maximum voltage |
| gptkbp:alternativeName |
gptkb:Schottky_barrier_diode
hot-carrier diode surface-barrier diode |
| gptkbp:characteristic |
fast switching speed
low forward voltage drop |
| gptkbp:discoveredIn |
1938
|
| gptkbp:excludes |
PN junction
|
| gptkbp:hasApplication |
logic gates
integrated circuits logic circuits rectifiers switching power supplies reverse current protection clampers detector circuits mixer circuits solar cell bypass voltage clippers |
| gptkbp:hasForwardVoltageDrop |
0.15 to 0.45 V
|
| gptkbp:hasReverseRecoveryTime |
very short
|
| gptkbp:hasType |
metal-semiconductor junction
|
| https://www.w3.org/2000/01/rdf-schema#label |
Schottky Diode
|
| gptkbp:isNotTypeOf |
bipolar device
|
| gptkbp:limitation |
higher reverse leakage current
lower reverse voltage rating |
| gptkbp:material |
gptkb:gold
gptkb:gallium_arsenide copper platinum silver aluminum nickel palladium silicon titanium molybdenum tungsten chromium |
| gptkbp:namedAfter |
gptkb:Walter_H._Schottky
|
| gptkbp:symbol |
Schematic symbol with S
|
| gptkbp:type |
unipolar device
|
| gptkbp:usedIn |
RF applications
clamping circuits power rectification voltage protection circuits |
| gptkbp:bfsParent |
gptkb:Varactor_Diodes
|
| gptkbp:bfsLayer |
6
|