Statements (31)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
Thin-film transistor
|
| gptkbp:abbreviation |
Oxide Thin-Film Transistor
|
| gptkbp:advantage |
Low power consumption
Good uniformity High electron mobility Low leakage current |
| gptkbp:application |
Flexible displays
High-resolution displays Large-area displays |
| gptkbp:commercialUse |
2000s
|
| gptkbp:contrastsWith |
Amorphous silicon TFT
|
| gptkbp:developedBy |
gptkb:Sharp_Corporation
|
| gptkbp:feature |
Transparency
Low-temperature process compatibility Stability under light exposure |
| https://www.w3.org/2000/01/rdf-schema#label |
Oxide TFT
|
| gptkbp:material |
Indium gallium zinc oxide
Oxide semiconductor |
| gptkbp:usedBy |
gptkb:LG_Display
gptkb:AU_Optronics gptkb:BOE_Technology_Group gptkb:TCL_CSOT gptkb:Samsung_Display |
| gptkbp:usedIn |
gptkb:technology
gptkb:LCD gptkb:AMOLED Wearable devices Active-matrix displays Touch panels |
| gptkbp:bfsParent |
gptkb:LTPO_AMOLED
|
| gptkbp:bfsLayer |
7
|