Statements (75)
| Predicate | Object |
|---|---|
| gptkbp:instance_of |
gptkb:Transistor
|
| gptkbp:application |
analog circuits
digital circuits |
| gptkbp:average_temperature |
positive
|
| gptkbp:benefits |
high speed
low power consumption higher leakage current compared to PMOS |
| gptkbp:body_effect |
influences threshold voltage
|
| gptkbp:common_configurations |
common drain
common gate common source |
| gptkbp:cutoff_region |
no current flows
|
| gptkbp:fuselage_material |
p-type
|
| gptkbp:gate_material |
polysilicon
|
| https://www.w3.org/2000/01/rdf-schema#label |
NMOS
|
| gptkbp:impedance |
low
high |
| gptkbp:legal_principle |
enhancement mode
|
| gptkbp:linear_region |
current increases with voltage
|
| gptkbp:majority_carrier |
electrons
|
| gptkbp:manufacturing_process |
CMOS technology
|
| gptkbp:orbital_period |
gptkb:Management
performance metrics availability environmental impact market demand power efficiency scalability signal integrity design rules cost failure analysis thermal stability testing procedures simulation models thermal resistance lifetime gate charge maximum gate-source voltage design complexity device reliability gate capacitance on-resistance transconductance characterization methods switching speed electrical characteristics layout considerations transistor size breakdown voltage drain current input capacitance output capacitance subthreshold slope mechanical characteristics circuit density integration level maximum drain-source voltage maximum power dissipation noise margin off-state current |
| gptkbp:saturation_region |
current is constant
|
| gptkbp:symbol |
N-channel MOSFET symbol
|
| gptkbp:threshold_voltage |
positive
|
| gptkbp:type |
gptkb:power_adapter
|
| gptkbp:bfsParent |
gptkb:TMS_9995
gptkb:Olivetti_13000_CPU gptkb:Olivetti_16000_CPU gptkb:Olivetti_20000_CPU gptkb:Olivetti_26000_CPU gptkb:Intel_8088 gptkb:MOS_Technology_8502 gptkb:Olivetti_400_CPU gptkb:Olivetti_800_CPU |
| gptkbp:bfsLayer |
6
|