Statements (69)
| Predicate | Object |
|---|---|
| gptkbp:instance_of |
gptkb:Company
|
| gptkbp:bfsLayer |
5
|
| gptkbp:bfsParent |
gptkb:TMS_9995
gptkb:Intel_8088 gptkb:MOS_Technology_8502 |
| gptkbp:application |
analog circuits
digital circuits |
| gptkbp:arrangements |
common drain
common gate common source |
| gptkbp:average_temperature |
positive
|
| gptkbp:benefits |
high speed
low power consumption higher leakage current compared to PMOS |
| gptkbp:body_style |
influences threshold voltage
|
| gptkbp:construction_material |
polysilicon
|
| gptkbp:distributor |
electrons
|
| https://www.w3.org/2000/01/rdf-schema#label |
NMOS
|
| gptkbp:legal_issue |
enhancement mode
|
| gptkbp:material |
p-type
|
| gptkbp:orbital_period |
gptkb:political_organization
performance metrics availability environmental impact market demand power efficiency scalability signal integrity design rules cost failure analysis thermal stability testing procedures simulation models thermal resistance lifetime gate charge maximum gate-source voltage design complexity device reliability gate capacitance on-resistance transconductance characterization methods switching speed electrical characteristics layout considerations transistor size breakdown voltage drain current input capacitance output capacitance subthreshold slope mechanical characteristics circuit density integration level maximum drain-source voltage maximum power dissipation noise margin off-state current |
| gptkbp:produced_by |
CMOS technology
|
| gptkbp:region |
current increases with voltage
current is constant no current flows |
| gptkbp:symbol |
N-channel MOSFET symbol
|
| gptkbp:trim_levels |
positive
|
| gptkbp:type |
gptkb:football_match
|
| gptkbp:water_resistance |
low
high |