Statements (54)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
|
| gptkbp:3D_NANDAdvantage |
higher capacity
lower cost per bit better endurance |
| gptkbp:3D_NANDIntroduced |
2013
|
| gptkbp:advantage |
limited write cycles
data retention issues low cost per bit high storage density |
| gptkbp:canBe |
gptkb:3D_NAND
2D NAND |
| gptkbp:cellStructure |
series-connected cells
|
| gptkbp:cellType |
single-level cell
multi-level cell penta-level cell quad-level cell triple-level cell |
| gptkbp:compatibleWith |
byte-level erasure
|
| gptkbp:contrastsWith |
NOR memory
|
| gptkbp:dataRetention |
typically 1-10 years
|
| gptkbp:developedBy |
gptkb:Toshiba
|
| gptkbp:endurance |
measured in program/erase cycles
|
| gptkbp:hasType |
gptkb:QLC
gptkb:PLC gptkb:MLC gptkb:SLC gptkb:TLC |
| https://www.w3.org/2000/01/rdf-schema#label |
NAND memory
|
| gptkbp:introducedIn |
1987
|
| gptkbp:inventedBy |
gptkb:Fujio_Masuoka
|
| gptkbp:market |
dominant in flash memory market
|
| gptkbp:namedAfter |
gptkb:NAND_logic_gate
|
| gptkbp:notableCompany |
gptkb:Kioxia
gptkb:Western_Digital gptkb:Samsung gptkb:Intel gptkb:SK_Hynix Micron |
| gptkbp:readBy |
slower than NOR memory
|
| gptkbp:requires |
error correction code (ECC)
|
| gptkbp:storesDataAs |
charge in floating-gate transistors
|
| gptkbp:supports |
block erasure
|
| gptkbp:usedFor |
embedded systems
data transfer mass storage |
| gptkbp:usedIn |
smartphones
tablets digital cameras solid-state drives USB flash drives memory cards |
| gptkbp:writeSpeed |
faster than NOR memory
|
| gptkbp:bfsParent |
gptkb:Line_NVM
|
| gptkbp:bfsLayer |
8
|