Statements (56)
| Predicate | Object |
|---|---|
| gptkbp:instance_of |
gptkb:memory
|
| gptkbp:benefits |
MLC NAND
SLC NAND |
| gptkbp:developed_by |
Various manufacturers
|
| gptkbp:has |
Higher endurance than QLC
|
| https://www.w3.org/2000/01/rdf-schema#label |
NAND 3 D TLC
|
| gptkbp:is_characterized_by |
Lower power consumption
Higher capacity Higher bit density Longer read times Shorter write times |
| gptkbp:is_compared_to |
gptkb:2_D_NAND
|
| gptkbp:is_evaluated_by |
Performance metrics
Cost efficiency Thermal performance Endurance ratings Speed tests Capacity tests Data integrity metrics Power consumption metrics Reliability ratings |
| gptkbp:is_known_for |
Lower cost per gigabyte
|
| gptkbp:is_more_cost_effective_than |
MLC NAND
SLC NAND |
| gptkbp:is_optimized_for |
Consumer applications
Read-heavy workloads |
| gptkbp:is_part_of |
Flash storage
Storage solutions Data storage technology Flash memory technology |
| gptkbp:is_subject_to |
Technological advancements
Market demand Supply chain issues Manufacturing challenges |
| gptkbp:is_used_in |
gptkb:Solid_State_Drives_(SSDs)
Consumer electronics Data centers Gaming consoles Laptops Mobile devices Desktops |
| gptkbp:is_vulnerable_to |
Write amplification
Data retention issues Endurance limitations |
| gptkbp:manufacturer |
gptkb:Samsung
gptkb:SK_Hynix gptkb:Western_Digital gptkb:Micron |
| gptkbp:offers |
Higher storage density
|
| gptkbp:provides |
Improved performance
|
| gptkbp:reliability |
MLC NAND
SLC NAND |
| gptkbp:type |
3 D NAND
|
| gptkbp:uses |
Triple-Level Cell (TLC) technology
|
| gptkbp:bfsParent |
gptkb:Micron's_memory_products
|
| gptkbp:bfsLayer |
7
|