Statements (21)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:Lithography_technique
|
| gptkbp:alternativeTo |
Extreme ultraviolet lithography
|
| gptkbp:appliesTo |
Photolithography
|
| gptkbp:challenge |
Increased cost
Overlay accuracy Process complexity |
| gptkbp:enables |
Smaller feature sizes
|
| gptkbp:includes |
Double patterning
Quadruple patterning Triple patterning |
| gptkbp:introducedIn |
gptkb:Intel
32nm technology node |
| gptkbp:relatedTo |
Self-aligned double patterning
Self-aligned quadruple patterning Spacer patterning |
| gptkbp:requires |
Multiple lithography and etching steps
|
| gptkbp:usedFor |
Sub-20nm process nodes
|
| gptkbp:usedIn |
Semiconductor manufacturing
|
| gptkbp:bfsParent |
gptkb:Fusion_Compiler
|
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
Multi-Patterning
|