Statements (51)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:technology
|
| gptkbp:advantage |
high production cost
no burn-in difficult manufacturing process higher brightness than OLED mass transfer challenges |
| gptkbp:alsoKnownAs |
gptkb:µLED
gptkb:mLED gptkb:micro-LED |
| gptkbp:application |
wearable devices
smartphone screens television displays augmented reality displays |
| gptkbp:canBe |
medical devices
smartwatches digital signage automotive displays outdoor displays flexible displays transparent displays heads-up displays microdisplays for AR/VR projection systems |
| gptkbp:compatibleWith |
backlight
|
| gptkbp:contrastsWith |
gptkb:LCD
OLED |
| gptkbp:demonstrates |
gptkb:Sony_Crystal_LED
gptkb:Samsung_The_Wall |
| gptkbp:emits |
self-emissive light
|
| gptkbp:feature |
low power consumption
long lifespan high efficiency high brightness wide color gamut fast response time high contrast ratio |
| https://www.w3.org/2000/01/rdf-schema#label |
MicroLEDs
|
| gptkbp:inventedBy |
gptkb:Hongxing_Jiang
gptkb:Jingyu_Lin 2000 |
| gptkbp:marketedAs |
gptkb:Apple
gptkb:LG gptkb:Samsung gptkb:Sony gptkb:AU_Optronics gptkb:PlayNitride |
| gptkbp:material |
gallium nitride (GaN)
indium gallium nitride (InGaN) |
| gptkbp:uses |
micrometer-scale light-emitting diodes
|
| gptkbp:bfsParent |
gptkb:OLEDs
|
| gptkbp:bfsLayer |
7
|