Statements (29)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
memory technology
|
| gptkbp:bank_groups |
4
|
| gptkbp:burst_length |
16
|
| gptkbp:channel_width |
16 bits
|
| gptkbp:dataRate |
up to 4266 MT/s
|
| gptkbp:feature |
higher efficiency
improved battery life reduced I/O voltage |
| https://www.w3.org/2000/01/rdf-schema#label |
LPDDR4x memory
|
| gptkbp:improvement_over |
gptkb:LPDDR4_memory
|
| gptkbp:introduced |
2017
|
| gptkbp:JEDECStandard |
JESD209-4B
|
| gptkbp:lower_power_consumption_than |
gptkb:LPDDR4_memory
|
| gptkbp:manufacturer |
gptkb:Samsung
gptkb:Micron_Technology gptkb:SK_Hynix |
| gptkbp:operatingSystem |
0.6V I/O
1.1V core |
| gptkbp:predecessor |
gptkb:LPDDR5_memory
|
| gptkbp:successor |
gptkb:LPDDR4_memory
|
| gptkbp:type |
gptkb:SDRAM
gptkb:LPDDR_memory |
| gptkbp:used_in |
smartphones
tablets mobile devices ultrabooks |
| gptkbp:bfsParent |
gptkb:10th_Gen_Intel_Core_processors
gptkb:11th_Gen_Intel_Core_processors |
| gptkbp:bfsLayer |
6
|