Statements (22)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:semiconductor_process_technology
|
| gptkbp:advantage |
improved performance
lower power consumption higher transistor density |
| gptkbp:developedBy |
gptkb:Intel
|
| gptkbp:introducedIn |
2014
|
| gptkbp:massProductionStart |
2014
|
| gptkbp:predecessor |
Intel 22nm Tri-Gate
|
| gptkbp:processNode |
14nm
|
| gptkbp:product |
Core M (Broadwell-Y)
|
| gptkbp:size |
14 nanometers
|
| gptkbp:successor |
Intel 10nm process
|
| gptkbp:transceiverType |
Tri-Gate (FinFET)
|
| gptkbp:transistorGateType |
3D gate
|
| gptkbp:usedIn |
gptkb:Broadwell
gptkb:Coffee_Lake gptkb:Comet_Lake gptkb:Kaby_Lake gptkb:Skylake |
| gptkbp:bfsParent |
gptkb:Stratix_10
|
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
Intel 14nm Tri-Gate
|