|
gptkbp:instance_of
|
gptkb:research_center
|
|
gptkbp:aims_to_improve
|
die size
|
|
gptkbp:characterized_by
|
smaller transistor size
|
|
gptkbp:competes_with
|
gptkb:AMD's_7nm_technology_node
|
|
gptkbp:developed_by
|
gptkb:Intel_Corporation
|
|
gptkbp:enables
|
higher performance
|
|
gptkbp:features
|
gptkb:financial_technology
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
Intel's 10nm technology node
|
|
gptkbp:improves
|
power efficiency
|
|
gptkbp:includes
|
new manufacturing processes
|
|
gptkbp:introduced_in
|
gptkb:2018
|
|
gptkbp:is_designed_for
|
high-performance computing
|
|
gptkbp:is_part_of
|
Intel's process technology roadmap
|
|
gptkbp:is_used_in
|
data center products
|
|
gptkbp:manufacturer
|
Extreme Ultraviolet Lithography (EUV)
|
|
gptkbp:successor
|
gptkb:Intel's_14nm_technology_node
gptkb:Intel's_7nm_technology_node
|
|
gptkbp:supports
|
AI workloads
|
|
gptkbp:used_in
|
gptkb:Intel_Core_processors
|
|
gptkbp:was_delayed_due_to
|
manufacturing challenges
|
|
gptkbp:bfsParent
|
gptkb:Tremont_microarchitecture
gptkb:Sapphire_Rapids_architecture
|
|
gptkbp:bfsLayer
|
5
|