gptkbp:instance_of
|
gptkb:chemical_compound
|
gptkbp:appearance
|
black solid
|
gptkbp:application
|
gptkb:spectroscopy
temperature sensors
photodetectors
laser diodes
night vision devices
infrared cameras
|
gptkbp:associated_band
|
0.17 e V
|
gptkbp:average_temperature
|
5.5 × 10⁻⁶ K⁻¹
|
gptkbp:characteristic
|
transparent in infrared
|
gptkbp:chemical_formula
|
In Sb
|
gptkbp:composed_by
|
chemical vapor deposition
molecular beam epitaxy
melt growth
|
gptkbp:cooling_system
|
0.5 W/(m· K)
|
gptkbp:discovered_by
|
gptkb:H._H._Hwang
|
gptkbp:discovery_year
|
gptkb:1952
|
gptkbp:dissolved
|
soluble in acids
|
gptkbp:electron_mobility
|
8,000 cm²/(V·s)
|
gptkbp:hole_mobility
|
1,000 cm²/(V·s)
|
https://www.w3.org/2000/01/rdf-schema#label
|
Indium Antimonide
|
gptkbp:mass
|
144.63 g/mol
|
gptkbp:melting_point
|
1,200 ° C
525 ° C
|
gptkbp:notable_conductors
|
gptkb:Company
|
gptkbp:population_density
|
5.7 g/cm³
|
gptkbp:related_products
|
gptkb:Lead_Sulfide
Gallium Antimonide
|
gptkbp:structure
|
cubic
zinc blende
|
gptkbp:toxicity
|
toxic if ingested
|
gptkbp:uses
|
infrared detectors
thermoelectric devices
|
gptkbp:bfsParent
|
gptkb:Indium_Phosphide
|
gptkbp:bfsLayer
|
5
|