IRF540

GPTKB entity

Statements (51)
Predicate Object
gptkbp:instance_of gptkb:power_adapter
gptkbp:application Power management
gptkbp:average_temperature -55° C
150° C
gptkbp:cooling_system 94 W
gptkbp:drain_current 33 A at 25° C
gptkbp:gate_charge 67n C
gptkbp:gate_drive_voltage 10 V to 15 V
gptkbp:gate_threshold_voltage 2 V to 4 V
https://www.w3.org/2000/01/rdf-schema#label IRF540
gptkbp:input_capacitance 1300p F
gptkbp:lead_free gptkb:Yes
gptkbp:manufacturer gptkb:International_Rectifier
gptkbp:max_drain_current 33 A
gptkbp:max_drain_source_voltage 100 V
gptkbp:max_gate_charge 67n C
gptkbp:max_gate_current ±20m A
gptkbp:max_gate_threshold_voltage 4 V
gptkbp:max_input_capacitance 1300p F
gptkbp:max_output_capacitance 300p F
gptkbp:max_power_dissipation 94 W
gptkbp:max_rds(on) 0.044Ω
gptkbp:max_reverse_recovery_time Not applicable
gptkbp:max_thermal_resistance_junction_to_case 62° C/ W
gptkbp:maximum_continuous_drain_current 33 A
gptkbp:maximum_drain_source_voltage 100 V
gptkbp:maximum_gate_source_voltage 20 V
gptkbp:min_drain_source_voltage 0 V
gptkbp:min_gate_charge 67n C
gptkbp:min_gate_threshold_voltage 2 V
gptkbp:min_input_capacitance 1300p F
gptkbp:min_output_capacitance 300p F
gptkbp:min_power_dissipation 0 W
gptkbp:min_rds(on) 0.044Ω
gptkbp:min_reverse_recovery_time Not applicable
gptkbp:min_thermal_resistance_junction_to_case 62° C/ W
gptkbp:mounting_options Through Hole
gptkbp:number_of_games gptkb:3
gptkbp:output_capacitance 300p F
gptkbp:packaging gptkb:TO-220
gptkbp:rds(on) 0.044Ω
gptkbp:regulatory_compliance gptkb:Ro_HS
gptkbp:reverse_recovery_time Not applicable
gptkbp:safety Available online
gptkbp:source_current 33 A at 25° C
gptkbp:switching_speed Fast
gptkbp:thermal_resistance_junction_to_case 62° C/ W
gptkbp:transistor_technology Silicon
gptkbp:type N-channel MOSFET
gptkbp:bfsParent gptkb:International_Rectifier
gptkbp:bfsLayer 6