gptkbp:instance_of
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gptkb:power_adapter
|
gptkbp:application
|
Power management
|
gptkbp:average_temperature
|
-55° C
150° C
|
gptkbp:cooling_system
|
94 W
|
gptkbp:drain_current
|
33 A at 25° C
|
gptkbp:gate_charge
|
67n C
|
gptkbp:gate_drive_voltage
|
10 V to 15 V
|
gptkbp:gate_threshold_voltage
|
2 V to 4 V
|
https://www.w3.org/2000/01/rdf-schema#label
|
IRF540
|
gptkbp:input_capacitance
|
1300p F
|
gptkbp:lead_free
|
gptkb:Yes
|
gptkbp:manufacturer
|
gptkb:International_Rectifier
|
gptkbp:max_drain_current
|
33 A
|
gptkbp:max_drain_source_voltage
|
100 V
|
gptkbp:max_gate_charge
|
67n C
|
gptkbp:max_gate_current
|
±20m A
|
gptkbp:max_gate_threshold_voltage
|
4 V
|
gptkbp:max_input_capacitance
|
1300p F
|
gptkbp:max_output_capacitance
|
300p F
|
gptkbp:max_power_dissipation
|
94 W
|
gptkbp:max_rds(on)
|
0.044Ω
|
gptkbp:max_reverse_recovery_time
|
Not applicable
|
gptkbp:max_thermal_resistance_junction_to_case
|
62° C/ W
|
gptkbp:maximum_continuous_drain_current
|
33 A
|
gptkbp:maximum_drain_source_voltage
|
100 V
|
gptkbp:maximum_gate_source_voltage
|
20 V
|
gptkbp:min_drain_source_voltage
|
0 V
|
gptkbp:min_gate_charge
|
67n C
|
gptkbp:min_gate_threshold_voltage
|
2 V
|
gptkbp:min_input_capacitance
|
1300p F
|
gptkbp:min_output_capacitance
|
300p F
|
gptkbp:min_power_dissipation
|
0 W
|
gptkbp:min_rds(on)
|
0.044Ω
|
gptkbp:min_reverse_recovery_time
|
Not applicable
|
gptkbp:min_thermal_resistance_junction_to_case
|
62° C/ W
|
gptkbp:mounting_options
|
Through Hole
|
gptkbp:number_of_games
|
gptkb:3
|
gptkbp:output_capacitance
|
300p F
|
gptkbp:packaging
|
gptkb:TO-220
|
gptkbp:rds(on)
|
0.044Ω
|
gptkbp:regulatory_compliance
|
gptkb:Ro_HS
|
gptkbp:reverse_recovery_time
|
Not applicable
|
gptkbp:safety
|
Available online
|
gptkbp:source_current
|
33 A at 25° C
|
gptkbp:switching_speed
|
Fast
|
gptkbp:thermal_resistance_junction_to_case
|
62° C/ W
|
gptkbp:transistor_technology
|
Silicon
|
gptkbp:type
|
N-channel MOSFET
|
gptkbp:bfsParent
|
gptkb:International_Rectifier
|
gptkbp:bfsLayer
|
6
|