gptkbp:instance_of
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gptkb:power_adapter
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gptkbp:application
|
Power switching
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gptkbp:average_temperature
|
-55 to 150 ° C
|
gptkbp:cooling_system
|
94 W
|
gptkbp:gate_charge
|
60n C
|
gptkbp:gate_source_voltage
|
±20 V
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gptkbp:gate_threshold_voltage
|
2-4 V
|
https://www.w3.org/2000/01/rdf-schema#label
|
IRF320
|
gptkbp:input_capacitance
|
1500p F
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gptkbp:lead_free
|
gptkb:Yes
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gptkbp:manufacturer
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gptkb:International_Rectifier
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gptkbp:max_continuous_drain_current
|
55 A
|
gptkbp:max_drain_current
|
55 A
|
gptkbp:max_drain_source_voltage
|
100 V
|
gptkbp:max_gate_charge
|
60n C
|
gptkbp:max_gate_source_voltage
|
±20 V
|
gptkbp:max_gate_threshold_voltage
|
4 V
|
gptkbp:max_input_capacitance
|
1500p F
|
gptkbp:max_output_capacitance
|
200p F
|
gptkbp:max_power_dissipation
|
94 W
|
gptkbp:max_pulse_drain_current
|
110 A
|
gptkbp:max_reverse_recovery_charge
|
Not applicable
|
gptkbp:max_reverse_recovery_current
|
Not applicable
|
gptkbp:max_storage_temperature
|
150 ° C
|
gptkbp:max_thermal_resistance_junction_to_ambient
|
62.5 ° C/ W
|
gptkbp:max_thermal_resistance_junction_to_case
|
1.5 ° C/ W
|
gptkbp:min_continuous_drain_current
|
0 A
|
gptkbp:min_drain_current
|
0 A
|
gptkbp:min_drain_source_voltage
|
0 V
|
gptkbp:min_gate_charge
|
0n C
|
gptkbp:min_gate_source_voltage
|
-20 V
|
gptkbp:min_gate_threshold_voltage
|
2 V
|
gptkbp:min_input_capacitance
|
0p F
|
gptkbp:min_output_capacitance
|
0p F
|
gptkbp:min_power_dissipation
|
0 W
|
gptkbp:min_pulse_drain_current
|
0 A
|
gptkbp:min_reverse_recovery_charge
|
Not applicable
|
gptkbp:min_reverse_recovery_current
|
Not applicable
|
gptkbp:min_storage_temperature
|
-55 ° C
|
gptkbp:min_thermal_resistance_junction_to_ambient
|
0 ° C/ W
|
gptkbp:min_thermal_resistance_junction_to_case
|
0 ° C/ W
|
gptkbp:output_capacitance
|
200p F
|
gptkbp:packaging
|
gptkb:TO-220
|
gptkbp:rds(on)
|
0.08Ω
|
gptkbp:reverse_recovery_time
|
Not applicable
|
gptkbp:rohs_compliant
|
gptkb:Yes
|
gptkbp:safety
|
available online
|
gptkbp:thermal_resistance_junction_to_ambient
|
62.5 ° C/ W
|
gptkbp:thermal_resistance_junction_to_case
|
1.5 ° C/ W
|
gptkbp:threshold_voltage
|
2-4 V
|
gptkbp:transistor_type
|
N-channel
|
gptkbp:bfsParent
|
gptkb:International_Rectifier_Corporation
|
gptkbp:bfsLayer
|
7
|