Heterojunction with Intrinsic Thin layer
GPTKB entity
Statements (22)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
Solar cell technology
|
| gptkbp:abbreviation |
gptkb:HIT
|
| gptkbp:application |
High-efficiency solar cells
|
| gptkbp:category |
Photovoltaic cell type
|
| gptkbp:developedBy |
gptkb:SANYO
1990s |
| gptkbp:efficiencyRecord |
over 25%
|
| gptkbp:feature |
Bifacial capability
Excellent temperature coefficient High open-circuit voltage Low temperature processing Thin amorphous silicon layers |
| https://www.w3.org/2000/01/rdf-schema#label |
Heterojunction with Intrinsic Thin layer
|
| gptkbp:marketedAs |
gptkb:Panasonic
|
| gptkbp:relatedTo |
Passivated emitter and rear cell
Silicon heterojunction solar cell |
| gptkbp:structure |
intrinsic amorphous silicon layer
n-type crystalline silicon wafer p-type amorphous silicon layer |
| gptkbp:usedIn |
Photovoltaics
|
| gptkbp:bfsParent |
gptkb:HIT
|
| gptkbp:bfsLayer |
6
|