Statements (48)
| Predicate | Object |
|---|---|
| gptkbp:instance_of |
gptkb:chemical_compound
|
| gptkbp:bfsLayer |
5
|
| gptkbp:bfsParent |
gptkb:Cree_LED_Lighting
|
| gptkbp:application |
RF amplifiers
laser diodes solar cells power transistors |
| gptkbp:associated_band |
3.4 e V
|
| gptkbp:average_temperature |
5.59 × 10⁻⁶/ K
|
| gptkbp:characteristics |
high efficiency
high breakdown voltage high thermal stability low on-resistance wide bandgap semiconductor high electron saturation velocity |
| gptkbp:color |
colorless
|
| gptkbp:composed_of |
hydride vapor phase epitaxy (HVPE)
metal-organic chemical vapor deposition (MOCVD) |
| gptkbp:cooling_system |
1.3 W/(m· K)
|
| gptkbp:discovered_by |
1970s
|
| gptkbp:dissolved |
insoluble in water
|
| gptkbp:electronegativity |
2000 cm²/(V·s)
|
| gptkbp:environmental_impact |
low toxicity
|
| gptkbp:future_plans |
promising technology
|
| gptkbp:growth_rate |
high
|
| https://www.w3.org/2000/01/rdf-schema#label |
Gallium nitride
|
| gptkbp:ingredients |
Ga N
|
| gptkbp:invention |
numerous filed
|
| gptkbp:is_compared_to |
gptkb:TV_Show
silicon carbide |
| gptkbp:lighting |
used in
|
| gptkbp:market |
increasing
growing demand |
| gptkbp:mass |
83.73 g/mol
|
| gptkbp:notable_conductors |
gptkb:Company
exhibited by |
| gptkbp:number_of_holes |
150 cm²/(V·s)
|
| gptkbp:population |
6.15 g/cm³
|
| gptkbp:price |
decreasing over time
|
| gptkbp:research |
ongoing advancements
|
| gptkbp:research_areas |
many involved
|
| gptkbp:safety_features |
generally safe to handle
|
| gptkbp:social_structure |
wurtzite
zinc blende |
| gptkbp:sustainability |
considered sustainable
|
| gptkbp:uses |
gptkb:DJ
power electronics high-frequency devices |