|
gptkbp:instance_of
|
gptkb:chemical_compound
|
|
gptkbp:application
|
RF amplifiers
laser diodes
solar cells
power transistors
|
|
gptkbp:associated_band
|
3.4 e V
|
|
gptkbp:average_temperature
|
5.59 × 10⁻⁶/ K
|
|
gptkbp:characteristic
|
wide bandgap semiconductor
|
|
gptkbp:characteristics
|
high efficiency
high breakdown voltage
high thermal stability
low on-resistance
high electron saturation velocity
|
|
gptkbp:chemical_formula
|
Ga N
|
|
gptkbp:color
|
colorless
|
|
gptkbp:composed_by
|
hydride vapor phase epitaxy (HVPE)
metal-organic chemical vapor deposition (MOCVD)
|
|
gptkbp:cooling_system
|
1.3 W/(m· K)
|
|
gptkbp:discovered_by
|
1970s
|
|
gptkbp:dissolved
|
insoluble in water
|
|
gptkbp:electron_mobility
|
2000 cm²/(V·s)
|
|
gptkbp:environmental_impact
|
low toxicity
|
|
gptkbp:future_prospects
|
promising technology
|
|
gptkbp:growth_rate
|
high
|
|
gptkbp:hole_mobility
|
150 cm²/(V·s)
|
|
https://www.w3.org/2000/01/rdf-schema#label
|
Gallium nitride
|
|
gptkbp:invention
|
numerous filed
|
|
gptkbp:is_compared_to
|
gptkb:Apple
silicon carbide
|
|
gptkbp:market
|
growing demand
|
|
gptkbp:market_share
|
increasing
|
|
gptkbp:mass
|
83.73 g/mol
|
|
gptkbp:notable_conductors
|
gptkb:Company
|
|
gptkbp:photonic_devices
|
used in
|
|
gptkbp:piezoelectric_properties
|
exhibited by
|
|
gptkbp:population_density
|
6.15 g/cm³
|
|
gptkbp:price
|
decreasing over time
|
|
gptkbp:research
|
ongoing advancements
|
|
gptkbp:research_institutes
|
many involved
|
|
gptkbp:safety
|
generally safe to handle
|
|
gptkbp:structure
|
wurtzite
zinc blende
|
|
gptkbp:sustainability
|
considered sustainable
|
|
gptkbp:uses
|
gptkb:LED
power electronics
high-frequency devices
|
|
gptkbp:bfsParent
|
gptkb:Cree_LED_Lighting
|
|
gptkbp:bfsLayer
|
6
|