Statements (23)
Predicate | Object |
---|---|
gptkbp:instanceOf |
gptkb:SDRAM
gptkb:EEPROM |
gptkbp:advantage |
low power consumption
high endurance slower write speed compared to RAM |
gptkbp:component |
embedded systems
integrated circuits |
gptkbp:erasedBy |
electrical charge
|
gptkbp:feature |
rewritable
data retention without power byte-level erasability |
https://www.w3.org/2000/01/rdf-schema#label |
Floating Gate EEPROM
|
gptkbp:inventedBy |
1970s
|
gptkbp:relatedTo |
gptkb:SDRAM
gptkb:EEPROM Fowler-Nordheim tunneling |
gptkbp:storage |
electrically erasable memory cells
|
gptkbp:usedIn |
microcontrollers
computers smart cards |
gptkbp:writtenBy |
electrical charge
|
gptkbp:bfsParent |
gptkb:Eli_Harari
|
gptkbp:bfsLayer |
6
|