Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
gptkb:EEPROM |
| gptkbp:advantage |
low power consumption
high endurance slower write speed compared to RAM |
| gptkbp:component |
embedded systems
integrated circuits |
| gptkbp:erasedBy |
electrical charge
|
| gptkbp:feature |
rewritable
data retention without power byte-level erasability |
| gptkbp:inventedBy |
1970s
|
| gptkbp:relatedTo |
gptkb:SDRAM
gptkb:EEPROM Fowler-Nordheim tunneling |
| gptkbp:storage |
electrically erasable memory cells
|
| gptkbp:usedIn |
microcontrollers
computers smart cards |
| gptkbp:writtenBy |
electrical charge
|
| gptkbp:bfsParent |
gptkb:Eli_Harari
|
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
Floating Gate EEPROM
|