Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:semiconductor_manufacturing_process
|
| gptkbp:alternativeTo |
planar MOSFET process
|
| gptkbp:commercialUse |
Intel 22nm process
|
| gptkbp:enables |
lower power consumption
higher performance smaller transistor sizes scaling below 20nm |
| gptkbp:feature |
3D transistor structure
fin-shaped channel |
| gptkbp:improves |
short channel control
|
| gptkbp:introducedIn |
2011
|
| gptkbp:reduces |
leakage current
|
| gptkbp:replacedBy |
planar CMOS process
|
| gptkbp:usedBy |
gptkb:Samsung
gptkb:Intel gptkb:TSMC |
| gptkbp:usedFor |
fabrication of FinFET transistors
|
| gptkbp:usedIn |
GPUs
mobile SoCs advanced CPUs |
| gptkbp:bfsParent |
gptkb:Radeon_RX_400_series
|
| gptkbp:bfsLayer |
7
|
| https://www.w3.org/2000/01/rdf-schema#label |
FinFET process
|