Erasable Programmable Read-Only Memory
GPTKB entity
Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:SDRAM
|
| gptkbp:abbreviation |
gptkb:EEPROM
|
| gptkbp:can_be_erased_by |
ultraviolet light
|
| gptkbp:can_be_reprogrammed |
yes
|
| gptkbp:category |
gptkb:microprocessor
|
| gptkbp:dataRetention |
10-20 years
|
| https://www.w3.org/2000/01/rdf-schema#label |
Erasable Programmable Read-Only Memory
|
| gptkbp:introduced |
1971
|
| gptkbp:inventedBy |
gptkb:Duvall,_Frohman-Bentchkowsky,_Wanlass
|
| gptkbp:program |
high voltage
|
| gptkbp:read_access |
random access
|
| gptkbp:relatedTo |
gptkb:EEPROM
gptkb:PROM |
| gptkbp:replacedBy |
gptkb:EEPROM
|
| gptkbp:type |
gptkb:DIP
|
| gptkbp:used_in |
gptkb:BIOS_chips
embedded systems microcontrollers |
| gptkbp:usedFor |
data storage
|
| gptkbp:window_material |
quartz
|
| gptkbp:write_access |
not electrically erasable
|
| gptkbp:bfsParent |
gptkb:EEPROM
|
| gptkbp:bfsLayer |
6
|