Statements (18)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:EEPROM
|
| gptkbp:application |
embedded systems
code storage |
| gptkbp:eraseType |
electrically erasable
|
| gptkbp:feature |
byte programmable
sector erase |
| https://www.w3.org/2000/01/rdf-schema#label |
ATF29C040
|
| gptkbp:manufacturer |
gptkb:Atmel
|
| gptkbp:memoryType |
gptkb:Flash
|
| gptkbp:operatingSystem |
5V
|
| gptkbp:organization |
512K x 8
|
| gptkbp:period |
70 ns
|
| gptkbp:RAM |
4 Mbit
|
| gptkbp:technology |
gptkb:CMOS
|
| gptkbp:type |
gptkb:TSOP
gptkb:PLCC |
| gptkbp:bfsParent |
gptkb:ATF29C_series
|
| gptkbp:bfsLayer |
6
|