Statements (23)
| Predicate | Object |
|---|---|
| gptkbp:instanceOf |
gptkb:EEPROM
|
| gptkbp:dataRetention |
10 years
|
| gptkbp:endurance |
100,000 write/erase cycles
|
| gptkbp:feature |
gptkb:CMOS_technology
Low power consumption Industrial and commercial temperature ranges Software data protection Byte-level write |
| https://www.w3.org/2000/01/rdf-schema#label |
AT28C256
|
| gptkbp:interface |
Parallel
|
| gptkbp:manufacturer |
gptkb:Atmel
|
| gptkbp:memoryType |
gptkb:Electrically_Erasable_Programmable_Read-Only_Memory
|
| gptkbp:operatingSystem |
5V
|
| gptkbp:organization |
32K x 8 bits
|
| gptkbp:period |
150 ns
|
| gptkbp:pinCount |
28
|
| gptkbp:RAM |
32 kilobytes
|
| gptkbp:type |
gptkb:TSOP
gptkb:DIP gptkb:PLCC |
| gptkbp:writeCycleTime |
10 ms
|
| gptkbp:bfsParent |
gptkb:AT28C_series
|
| gptkbp:bfsLayer |
7
|